Newcastle University
Toggle Main Menu
Toggle Search
Home
Browse
Latest
Policies
About
Home
Browse
Latest
Policies
About
ePrints
Browse by author
Browsing publications by
Dr Konstantin Vasilevskiy.
Newcastle Authors
Title
Year
Full text
Merve Yakut
Atreyee Roy
Jake Sheriff
Dr Sarah Olsen
Dr Konstantin Vasilevskiy
et al.
Increasing Mobility in 4H-SiC MOSFETs with Deposited Oxide by
In Situ
Nitridation of SiC Surface
2024
Professor Anthony O'Neill
Faiz Arith
Dr Jesus Urresti Ibanez
Dr Konstantin Vasilevskiy
Professor Nick Wright
et al.
High Mobility 4H-SiC MOSFET
2018
Faiz Arith
Dr Jesus Urresti Ibanez
Dr Konstantin Vasilevskiy
Dr Sarah Olsen
Professor Nick Wright
et al.
High mobility 4H-SiC MOSFET using a thin SiO
2
/Al
2
O
3
gate stack
2018
Faiz Arith
Dr Jesus Urresti Ibanez
Dr Konstantin Vasilevskiy
Dr Sarah Olsen
Professor Nick Wright
et al.
Increased Mobility in Enhancement Mode 4H-SiC MOSFET Using a Thin SiO
2
/ Al
2
O
3
Gate Stack
2018
Dr Konstantin Vasilevskiy
Sandip Roy
Neal Wood
Dr Alton Horsfall
Professor Nick Wright
et al.
On electrons mobility in heavily nitrogen doped 4H-SiC
2017
Dr Hua Khee Chan
Dr Konstantin Vasilevskiy
Professor Nick Wright
Dr Alton Horsfall
4H-SiC Schottky diode arrays for X-ray detection
2016
Harbaljit Sohal
Dr Konstantin Vasilevskiy
Professor Andrew Jackson
Professor Stuart Baker
Professor Anthony O'Neill
et al.
Design and Microfabrication Considerations for Reliable Flexible Intracortical Implants
2016
Dr Toby Hopf
Dr Konstantin Vasilevskiy
Dr Enrique Escobedo-Cousin
Dr Alton Horsfall
Professor Jon Goss
et al.
Facile technique for the removal of metal contamination from graphene
2015
Dr Toby Hopf
Dr Konstantin Vasilevskiy
Enrique Escobedo-Cousin
Professor Nick Wright
Dr Alton Horsfall
et al.
Determination of the adhesion energy of graphene on SiC(0001) via measurement of pleat defects
2014
Dr Toby Hopf
Dr Konstantin Vasilevskiy
Dr Enrique Escobedo-Cousin
Dr Peter King
Professor Nick Wright
et al.
Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature
2014
Sandip Roy
Dr Konstantin Vasilevskiy
Professor Nick Wright
Dr Alton Horsfall
Discriminating High k Dielectric gas Sensors
2014
Dr Toby Hopf
Dr Konstantin Vasilevskiy
Dr Enrique Escobedo-Cousin
Professor Anthony O'Neill
Dr Alton Horsfall
et al.
Optimizing the vacuum growth of epitaxial graphene on 6H-SiC
2014
Dr Enrique Escobedo-Cousin
Dr Konstantin Vasilevskiy
Dr Toby Hopf
Professor Nick Wright
Professor Anthony O'Neill
et al.
Solid Phase Growth of Graphene on Silicon Carbide by Nickel Silicidation: Graphene Formation Mechanisms
2014
Harbaljit Sohal
Professor Andrew Jackson
Dr Gavin Clowry
Dr Konstantin Vasilevskiy
Professor Anthony O'Neill
et al.
The sinusoidal probe: a new approach to improve electrode longevity
2014
Dr Enrique Escobedo-Cousin
Dr Konstantin Vasilevskiy
Dr Toby Hopf
Professor Nick Wright
Professor Anthony O'Neill
et al.
Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon
2013
Benjamin Furnival
Sandip Roy
Dr Konstantin Vasilevskiy
Professor Nick Wright
Dr Alton Horsfall
et al.
CMOS compatible gas sensor arrays for hostile environments
2012
Daniel Brennan
Dr Konstantin Vasilevskiy
Professor Nick Wright
Dr Alton Horsfall
Direct Frequency Modulation of a High Temperature Silicon Carbide Oscillator
2012
Dr Enrique Escobedo-Cousin
Dr Konstantin Vasilevskiy
Irina Nikitina
Professor Nick Wright
Professor Anthony O'Neill
et al.
Local Solid Phase Epitaxy of Few-Layer Graphene on Silicon Carbide
2012
Daniel Brennan
Dr Omid Mostaghimi
Dr Konstantin Vasilevskiy
Professor Nick Wright
Dr Alton Horsfall
et al.
Novel SiC self starting DC-DC converter for high temperature wireless sensor nodes
2012
Simon Barker
Dr Konstantin Vasilevskiy
Irina Nikitina
Professor Nick Wright
Dr Alton Horsfall
et al.
Thermal Stress Response of Silicon Carbide pin Diodes Used As Photovoltaic Devices
2012
Dr Konstantin Vasilevskiy
Irina Nikitina
Dr Alton Horsfall
Professor Nick Wright
Dr Christopher Johnson
et al.
3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring
2011
Dr Konstantin Vasilevskiy
Professor Nick Wright
Dr Alton Horsfall
Effect of Proton Irradiation Induced Defects on 4H-SiC Schottky Diode X-ray Detectors
2011
Benjamin Furnival
Dr Konstantin Vasilevskiy
Professor Nick Wright
Dr Alton Horsfall
Recovery of Ohmic Contacts Formed on C-face 4H-SiC Following High Temperature Post-Processing
2011
Dr Konstantin Vasilevskiy
Professor Nick Wright
Semiconductor device having SiC substrate and method for manufacturing the same
2011
Dr Konstantin Vasilevskiy
Irina Nikitina
Dr Alton Horsfall
Professor Nick Wright
Silicon Carbide Vertical JFET with Self-Aligned Nickel Silicide Contacts
2011
Dr Konstantin Vasilevskiy
Irina Nikitina
Dr Alton Horsfall
Professor Nick Wright
Dr Christopher Johnson
et al.
4.6 kV, 10.5 mOhm.cm(2) Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers
2010
Dr Konstantin Vasilevskiy
Irina Nikitina
Dr Alton Horsfall
Professor Nick Wright
Dr Christopher Johnson
et al.
6 kV, 10.5 mOhm·cm2 nickel silicide Schottky diodes on commercial 4H-SiC epitaxial wafers
2010
Harbaljit Sohal
Professor Andrew Jackson
Robert Jackson
Dr Konstantin Vasilevskiy
Dr Gavin Clowry
et al.
A novel flexible sinusoidal electrode to enhance longevity of chronic neuronal recordings
2010
Daniel Brennan
Bing Miao
Dr Konstantin Vasilevskiy
Professor Nick Wright
Dr Alton Horsfall
et al.
Amplitude shift keyed radio communications for hostile environments
2010
Daniel Brennan
Bing Miao
Dr Konstantin Vasilevskiy
Professor Nick Wright
Dr Alton Horsfall
et al.
Amplitude Shift Keyed Radio Communications for Hostile Environments
2010
Dr Konstantin Vasilevskiy
Irina Nikitina
Professor Nick Wright
Free standing AlN single crystal grown on pre-patterned and in situ patterned 4H-SiC substrates
2010
Dr Konstantin Vasilevskiy
Irina Nikitina
Professor Nick Wright
Free standing AlN single crystal growth on pre-patterned and in situ patterned 4H-SiC substrates
2010
Dr Konstantin Vasilevskiy
Irina Nikitina
Dr Alton Horsfall
Professor Nick Wright
Dr Christopher Johnson
et al.
Growth of few layers graphene on silicon carbide from nickel silicide supersaturated with carbon
2010
Dr Konstantin Vasilevskiy
Irina Nikitina
Dr Alton Horsfall
Professor Nick Wright
Growth of Few Layers Graphene on Silicon Carbide from Nickel Silicide Supersaturated with Carbon
2010
Simon Barker
Dr Konstantin Vasilevskiy
Professor Nick Wright
Dr Alton Horsfall
High Temperature Vibration Energy Harvester System
2010
Irina Nikitina
Dr Konstantin Vasilevskiy
Professor Nick Wright
Dr Alton Horsfall
Method of forming an ohmic contact in wide band semiconductor
2010
Simon Barker
Bing Miao
Daniel Brennan
Dr Konstantin Vasilevskiy
Professor Nick Wright
et al.
Silicon carbide based energy harvesting module for hostile environments
2010
Simon Barker
Bing Miao
Daniel Brennan
Dr Konstantin Vasilevskiy
Professor Nick Wright
et al.
Silicon Carbide based Energy Harvesting Module for Hostile Environments
2010
Professor Nick Wright
Dr Christopher Johnson
Dr Alton Horsfall
Dr Konstantin Vasilevskiy
Applications-based design of SiC technology
2009
Dr Konstantin Vasilevskiy
Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide
2009
Irina Nikitina
Dr Konstantin Vasilevskiy
Dr Alton Horsfall
Professor Nick Wright
Professor Anthony O'Neill
et al.
Phase composition and electrical characteristics of nickel silicide Schottky contacts formed on 4H-SiC
2009
Dr Konstantin Vasilevskiy
Irina Nikitina
Dr Alton Horsfall
Professor Nick Wright
Professor Anthony O'Neill
et al.
Silicon Carbide Static Induction Transistor with Implanted Buried Gate
2009
Simon Barker
Rupert Stevens
Dr Konstantin Vasilevskiy
Irina Nikitina
Professor Nick Wright
et al.
Silicon Carbide UV Based Photovoltaic for Hostile Environments
2009
Dr Konstantin Vasilevskiy
Professor Nick Wright
Irina Nikitina
Dr Alton Horsfall
Dr Christopher Johnson
et al.
Silicon carbide vertical JFET operating at high temperature
2009
Dr Konstantin Vasilevskiy
Irina Nikitina
Professor Nick Wright
Dr Christopher Johnson
Impact ionization in ion implanted 4H-SiC photodiodes
2008
Irina Nikitina
Dr Konstantin Vasilevskiy
Dr Alton Horsfall
Professor Nick Wright
Professor Anthony O'Neill
et al.
Phase Inhomogeneity and Electrical Characteristics of Nickel Silicide Schottky Contacts Formed on 4H-SiC
2008
Professor Nick Wright
Dr Alton Horsfall
Dr Konstantin Vasilevskiy
Prospects for SiC electronics and sensors
2008
Praneet Bhatnagar
Professor Nick Wright
Dr Alton Horsfall
Dr Konstantin Vasilevskiy
Dr Christopher Johnson
et al.
High temperature characterisation of 4H-SiC VJFET
2007
Dr Konstantin Vasilevskiy
Irina Nikitina
Dr Alton Horsfall
Professor Nick Wright
Professor Anthony O'Neill
et al.
High voltage silicon carbide schottky diodes with single zone junction termination extension
2007
Dr Konstantin Vasilevskiy
Irina Nikitina
Dr Gordon Phelps
Dr Alton Horsfall
Professor Nick Wright
et al.
Potential benefits of silicon carbide zener diodes used as components of intrinsically safe barriers
2007
Dr Alton Horsfall
Dr Konstantin Vasilevskiy
Professor Nick Wright
Semi-transparent SiC Schottky diodes for X-ray spectroscopy
2007
Chia-Ching Chen
Dr Alton Horsfall
Professor Nick Wright
Dr Konstantin Vasilevskiy
Temperature stability of heteropolytypic 6H/3C FETs
2007
Praneet Bhatnagar
Dr Alton Horsfall
Professor Nick Wright
Dr Christopher Johnson
Dr Konstantin Vasilevskiy
et al.
Analytical modelling of I-V characteristics for 4H-SiC enhancement mode VJFET
2006
Dr Ming-Hung Weng
Dr Alton Horsfall
Professor Nick Wright
Dr Konstantin Vasilevskiy
Irina Nikitina
et al.
Comparison of parameter extraction techniques for SiC Schottky diodes
2006
Dr Ming-Hung Weng
Dr Alton Horsfall
Professor Nick Wright
Dr Konstantin Vasilevskiy
Irina Nikitina
et al.
Comparison of parameter extraction techniques for SiC Schottky diodes
2006
Dr Konstantin Vasilevskiy
Irina Nikitina
Professor Nick Wright
Dr Alton Horsfall
Professor Anthony O'Neill
et al.
Device processing and characterisation of high temperature silicon carbide Schottky diodes
2006
Dr Konstantin Vasilevskiy
Irina Nikitina
Dr Alton Horsfall
Professor Nick Wright
Professor Anthony O'Neill
et al.
High temperature operation of silicon carbide Schottky diodes with recoverable avalanche breakdown
2006
Irina Nikitina
Dr Konstantin Vasilevskiy
Professor Nick Wright
Dr Alton Horsfall
Method of forming an ohmic contact in wide band semiconductor
2006
Dr Konstantin Vasilevskiy
Microwave p-i-n diodes and switches based on 4H-SiC
2006
Dr Alton Horsfall
Peter Tappin
Professor Nick Wright
Dr Konstantin Vasilevskiy
Irina Nikitina
et al.
Optimisation of 4H-SiC MOSFET structures for logic applications
2006
Dr Konstantin Vasilevskiy
Silicon carbide diodes for microwave applications
2006
Irina Nikitina
Dr Konstantin Vasilevskiy
Dr Alton Horsfall
Professor Nick Wright
Professor Anthony O'Neill
et al.
Structural pattern formation in titanium-nickel contacts on silicon carbide following high-temperature annealing
2006
Dr Konstantin Vasilevskiy
Irina Nikitina
Dr Alton Horsfall
Professor Nick Wright
Dr Christopher Johnson
et al.
Structural properties of titanium-nickel films on silicon carbide following high temperature annealing
2006
Dr Konstantin Vasilevskiy
4H-SiC pin diodes for microwave applications
2005
Dr Konstantin Vasilevskiy
4H-SiC PIN diodes for microwave applications
2005
Professor Nick Wright
Dr Konstantin Vasilevskiy
Irina Nikitina
Dr Alton Horsfall
Dr Christopher Johnson
et al.
Aluminium implantation induced linear surface faults in 4H-SiC
2005
Professor Nick Wright
Dr Konstantin Vasilevskiy
Irina Nikitina
Dr Alton Horsfall
Dr Christopher Johnson
et al.
Aluminium implantation induced linear surface faults in 4H-SiC
2005
Praneet Bhatnagar
Dr Alton Horsfall
Professor Nick Wright
Professor Anthony O'Neill
Dr Konstantin Vasilevskiy
et al.
Effective edge termination design in SiCVJFET
2005
Irina Nikitina
Dr Konstantin Vasilevskiy
Professor Nick Wright
Dr Alton Horsfall
Professor Anthony O'Neill
et al.
Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n -type silicon carbide
2005
Dr Konstantin Vasilevskiy
III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer
2005
Dr Alton Horsfall
Peter Tappin
Praneet Bhatnagar
Professor Nick Wright
Dr Konstantin Vasilevskiy
et al.
Optimisation of 4H-SIC MOSFET structures for logic applications
2005
Praneet Bhatnagar
Dr Alton Horsfall
Professor Nick Wright
Dr Christopher Johnson
Dr Konstantin Vasilevskiy
et al.
Optimisation of a 4H-SiC enhancement mode power JFET for high temperature operation
2005
Dr Konstantin Vasilevskiy
Professor Nick Wright
Irina Nikitina
Dr Alton Horsfall
Professor Anthony O'Neill
et al.
Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing
2005
Cezar Blasciuc-Dimitriu
Dr Alton Horsfall
Professor Nick Wright
Dr Christopher Johnson
Dr Konstantin Vasilevskiy
et al.
Quantum modelling of I-V characteristics for 4H-SiC Schottky barrier diodes
2005
Dr Konstantin Vasilevskiy
Silicon carbide diodes for microwave applications
2005
Professor Nick Wright
Nipapan Poolamai
Dr Konstantin Vasilevskiy
Dr Alton Horsfall
Dr Christopher Johnson
et al.
Benefits of high-k dielectrics in 4H-SIC trench MOSFETs
2004
Professor Nick Wright
Nipapan Poolamai
Dr Konstantin Vasilevskiy
Dr Alton Horsfall
Dr Christopher Johnson
et al.
Benefits of high-k dielectrics in 4H-SiC trench MOSFETs
2004
Dr Konstantin Vasilevskiy
Dr Alton Horsfall
Dr Christopher Johnson
Professor Nick Wright
Edge termination of SiC Schottky diodes with guard rings formed by high energy Boron implantation
2004
Dr Konstantin Vasilevskiy
Experimental study of SiC p-i-n diodes in the 3-cm range
2004
Dr Alton Horsfall
Professor Nick Wright
Dr Christopher Johnson
Dr Konstantin Vasilevskiy
Professor Anthony O'Neill
et al.
First principles derivation of carrier transport across metal - SiC barriers
2004
Dr Konstantin Vasilevskiy
Dr Alton Horsfall
Dr Christopher Johnson
Professor Nick Wright
Low voltage silicon carbide zener diode
2004
Dr Konstantin Vasilevskiy
Microwave switches based on 4H-SiC p-i-n diodes
2004
Dr Konstantin Vasilevskiy
P-n heterojunction-based structures utilizing HVPE grown III-V compound layers
2004
Dr Konstantin Vasilevskiy
Dr John Hedley
Dr Alton Horsfall
Dr Christopher Johnson
Professor Nick Wright
et al.
Reactive ion etching of silicon carbide with patterned boron implantation
2004
Dr Konstantin Vasilevskiy
Dr John Hedley
Dr Alton Horsfall
Dr Christopher Johnson
Professor Nick Wright
et al.
Reactive ion etching of Silicon Carbide with patterned Boron implantation
2004
Dr Konstantin Vasilevskiy
Simulation and prototype fabrication of microwave modulators with 4H-SiC p-i-n diodes
2004
Cezar Blasciuc-Dimitriu
Dr Alton Horsfall
Dr Konstantin Vasilevskiy
Dr Christopher Johnson
Professor Nick Wright
et al.
Characterisation of the High Temperature Performance of 4H-SiC Schottky Barrier Diodes
2003
Dr Konstantin Vasilevskiy
Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques
2003
Dr Konstantin Vasilevskiy
Method for growing p-n heterojunction-based structures utilizing HVPE techniques
2003
Dr Konstantin Vasilevskiy
Method for growing p-type III-V compound material utilizing HVPE techniques
2003
Dr Konstantin Vasilevskiy
Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide
2003
Dr Konstantin Vasilevskiy
4H-SiC IMPATT diode fabrication and testing
2002
Dr Konstantin Vasilevskiy
4H-SiC IMPATT diode fabrication and testing
2002
Dr Konstantin Vasilevskiy
Dr Alton Horsfall
Dr Christopher Johnson
Professor Nick Wright
Professor Anthony O'Neill
et al.
4H-SiC rectifiers with dual metal planar Schottky contacts
2002
Dr Konstantin Vasilevskiy
Dr Alton Horsfall
Dr Christopher Johnson
Professor Nick Wright
Professor Anthony O'Neill
et al.
4H-SiC Schottky diodes with high on/off current ratio
2002
Dr Konstantin Vasilevskiy
Dr Alton Horsfall
Dr Christopher Johnson
Professor Nick Wright
Professor Anthony O'Neill
et al.
4H-SiC Schottky diodes with high on/off current ratio
2002
Cezar Blasciuc-Dimitriu
Dr Alton Horsfall
Dr Konstantin Vasilevskiy
Dr Christopher Johnson
Professor Nick Wright
et al.
Characterisation of the high temperature performance of 4H-SiC Schottky barrier diodes
2002
Dr Gordon Phelps
Professor Nick Wright
Dr Graeme Chester
Dr Christopher Johnson
Professor Anthony O'Neill
et al.
Enhanced dopant diffusion effects in 4H silicon carbide
2002
Dr Gordon Phelps
Professor Nick Wright
Dr Graeme Chester
Dr Christopher Johnson
Professor Anthony O'Neill
et al.
Enhanced nitrogen diffusion in 4H-SiC
2002
Dr Konstantin Vasilevskiy
Method for growing p-n homojunction-based structures utilizing HVPE techniques
2002
Dr Konstantin Vasilevskiy
Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide
2002
Dr Alton Horsfall
Dr Konstantin Vasilevskiy
Dr Christopher Johnson
Professor Nick Wright
Professor Anthony O'Neill
et al.
Optimisation of implanted guard-ring terminations in 4H-SiC Schottky diodes
2002
Dr Alton Horsfall
Dr Konstantin Vasilevskiy
Dr Christopher Johnson
Professor Nick Wright
Professor Anthony O'Neill
et al.
Optimisation of implanted guard-ring terminations in 4H-SiC Schottky diodes
2002
Dr Konstantin Vasilevskiy
Photon emission analysis of defect-free 4H-SiC p-n diodes in the avalanche regime
2002
Dr Konstantin Vasilevskiy
Experimental observation of microwave oscillations produced by pulsed silicon carbide IMPATT diode
2001
Dr Konstantin Vasilevskiy
Irina Nikitina
Phase Formation at Rapid Thermal Annealing of Al/Ti/Ni Ohmic Contacts on 4H-SiC
2001
Dr Konstantin Vasilevskiy
Process for producing III-V nitride pn junctions and p-i-n junctions
2001
Dr Konstantin Vasilevskiy
Silicon carbide Zener diodes
2001
Dr Konstantin Vasilevskiy
X-band silicon carbide IMPATT oscillator
2001
Dr Konstantin Vasilevskiy
Experimental Determination of Electron Drift Velocity in 4H-SiC p+-n-n+ Avalanche Diodes
2000
Dr Konstantin Vasilevskiy
Electrical characteristics and structural properties of ohmic contacts to p-type 4H-SiC epitaxial layers
1999
Dr Konstantin Vasilevskiy
Study of annealing conditions on the formation of ohmic contacts on p+ 4H-SiC layers grown by CVD and LPE
1999