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Lookup NU author(s): Dr Konstantin VasilevskiyORCiD
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4H-SiC p-i-n diodes were designed, fabricated and characterized with the aim to be used for microwave applications. The best diodes with mesa structure diameters between 80 and 150μm, exhibited a blocking voltage of 1100 V, a 100mA differential resistance of 1-2 Ω, a capacitance below 0.5pF at punchthrough voltage of 100 V and carrier effective lifetime between 15-27 ns. X-band microwave switches based on 4H-SiC p-i-n diodes are demonstrated for the first time. The switches exhibited insertion losses as low as 0.7 dB, isolation up to 25 dB and operation in pulsed high microwave powers of 2.2 kW in isolation mode and 0.4 kW in insertion mode. © 2005 IEEE.
Author(s): Zekentes K, Camara N, Romanov L, Kirillov A, Boltovets MS, Lebedev A, Vassilevski KV
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Proceedings of the International Semiconductor Conference, CAS
Year of Conference: 2005
Pages: 17-25
Publisher: IEEE
URL: http://dx.doi.org/10.1109/SMICND.2005.1558702
DOI: 10.1109/SMICND.2005.1558702
Library holdings: Search Newcastle University Library for this item
ISBN: 0780392140