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Lookup NU author(s): Dr Enrique Escobedo-Cousin, Dr Konstantin VasilevskiyORCiD, Dr Toby Hopf, Professor Nick Wright, Professor Anthony O'Neill, Dr Alton Horsfall, Professor Jon Goss
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This work presents experimental evidence of the formation mechanisms of few-layer graphene (FLG) films on SiC by nickel silicidation. FLG is formed by annealing of a 40 nm thick Ni layer on 6H-SiC at 1035ยบC for 60 s, resulting in a Ni2Si layer which may be capped by any Ni that did not react during annealing. It has been proposed that FLG forms on top of the Ni during the high temperature stage. In contrast, during cooling, carbon atoms which were released during the silicidation reaction may diffuse back towards the Ni2Si/SiC interface to form a second FLG film. After annealing, layer-by-layer de-processing was carried out in order to unequivocally identify the FLG at each location using Atomic force microscopy (AFM) and Raman spectroscopy.
Author(s): Escobedo-Cousin E, Vassilevski K, Hopf T, Wright N, O'Neill AG, Horsfall AB, Goss JP
Publication type: Article
Publication status: Published
Journal: Materials Science Forum
Year: 2014
Volume: 778-780
Pages: 1162-1165
Online publication date: 26/02/2014
Acceptance date: 26/02/2014
ISSN (print): 0255-5476
ISSN (electronic): 1662-9752
Publisher: Scientific.Net
URL: http://dx.doi.org/ 10.4028/www.scientific.net/MSF.778-780.1162
DOI: 10.4028/www.scientific.net/MSF.778-780.1162
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