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Lookup NU author(s): Dr Konstantin VasilevskiyORCiD
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Silicon carbide (SiC) offers significant advantages for microwave high power devises due to its unique electrical and thermal properties. This review presents a summary of the current position in the development of silicon carbide diodes operating at microwave frequencies: varactors, Schottky barrier mixer diodes, p-i-n and IMPATT diodes. Simplified theory of device operation is given for each kind of microwave diodes to derive the figures of merit, to estimate the potential silicon carbide performance for fabrication of these diodes and to compare SiC with conventional semiconductors. These analyses are followed by description of diode design, fabrication and measured characteristics. © World Scientific Publishing Company.
Author(s): Vassilevski K
Publication type: Review
Publication status: Published
Journal: International Journal of High Speed Electronics and Systems
Year: 2005
Volume: 15
Issue: 4
Pages: 899-930
ISSN (print): 0129-1564
ISSN (electronic): 1793-6438
URL: http://dx.doi.org/10.1142/S0129156405003454
DOI: 10.1142/S0129156405003454
