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Lookup NU author(s): Dr Konstantin VasilevskiyORCiD, Irina Nikitina, Dr Alton Horsfall, Professor Nick Wright
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Trenched implanted vertical JI.ETs (TI-VJFETs) with self-aligned gate and source contacts were fabricated on commercial 4H-SiC epitaxial wafers. Gate regions were formed by aluminium implantation through the same silicon oxide mask which was used for etching mesa-structures. Self-aligned nickel silicide source and gate contacts were formed using a silicon oxide spacer formed on mesa-structure sidewalls by anisotropic thermal oxidation of silicon carbide followed by anisotropic reactive ion etching of oxide. Fabricated normally-on 4H-SiC TI-VJFETs demonstrated low gate leakage currents and blocking voltages exceeding 200 V.
Author(s): Vassilevski K, Nikitina I, Horsfall AB, Wright NG, Smith AJ, Johnson CM
Editor(s): Monakhov, E.V., Hornos, T., Svensson, B.G.
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Materials Science Forum: 8th European Conference on Silicon Carbide and Related Materials
Year of Conference: 2011
Pages: 670-673
ISSN: 0255-5476 (print) 1422-6375 (online)
Publisher: Trans Tech Publications Ltd.
URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.679-680.670
DOI: 10.4028/www.scientific.net/MSF.679-680.670
Library holdings: Search Newcastle University Library for this item
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