Browse by author
Lookup NU author(s): Dr Konstantin VasilevskiyORCiD, Irina Nikitina, Professor Nick Wright, Dr Alton Horsfall, Professor Anthony O'Neill, Dr Christopher Johnson
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
High temperature silicon carbide diodes with nickel silicide Schottky contacts were fabricated by deposition of titanium-nickel metal film on 4H-SiC epitaxial wafer followed by annealing at 550 °C in vacuum. Room temperature boron implantation have been used to form single zone junction termination extension. 4H-SiC epitaxial structures designed to have theoretical parallel-plain breakdown voltages of 1900 and 3600 V have been used for this research. The diodes revealed soft recoverable avalanche breakdown at voltages of 1450 and 3400 V, respectively, which are about 80% and 95% of theoretical values. I-V characteristics of fabricated 4H-SiC Schottky diodes have been measured at temperatures from room temperature up to 400 °C. The diodes revealed unchangeable barrier heights and ideality factors as well as positive coefficients of breakdown voltage. © 2005 Elsevier B.V. All rights reserved.
Author(s): Vassilevski KV, Nikitina IP, Wright NG, Horsfall AB, O'Neill AG, Johnson CM
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 3rd International Conference on Materials for Advanced Technologies/9th International Conference on Advanced Materials
Year of Conference: 2006
Pages: 150-154
ISSN: 0167-9317
Publisher: Microelectronic Engineering, Elsevier BV
URL: http://dx.doi.org/10.1016/j.mee.2005.10.041
DOI: 10.1016/j.mee.2005.10.041
Library holdings: Search Newcastle University Library for this item
ISBN: 18735568