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Browsing publications by
Dr Sanatan Chattopadhyay.
Newcastle Authors
Title
Year
Full text
Patrycja Stachelek
Dr Sanatan Chattopadhyay
Emeritus Professor Anthony Harriman
Solvent-Driven Conformational Exchange for Amide-Linked Bichromophoric BODIPY Derivatives
2016
Andrew Bryant
Dr Ahmed Elattar
Dr Sanatan Chattopadhyay
Surgical cytoreduction for recurrent epithelial ovarian cancer
2013
Dr Patrick Yu Wai Man
Dr Sanatan Chattopadhyay
Philip Griffiths
Professor Patrick Chinnery
A randomized placebo-controlled trial of idebenone in Leber's hereditary optic neuropathy
2011
Santosh Shedabale
Dr Gordon Russell
Professor Alex Yakovlev
Dr Sanatan Chattopadhyay
Statistical modelling of the variation in advanced process technologies using a multi-level partitioned response surface approach
2008
Dr Rajat Mahapatra
Dr Alton Horsfall
Dr Sanatan Chattopadhyay
Professor Nick Wright
Effects of interface engineering for HfO2 gate dielectric stack on 4H-SiC
2007
Dr Rajat Mahapatra
Peter Tappin
Bing Miao
Dr Alton Horsfall
Dr Sanatan Chattopadhyay
et al.
Impact of interfacial nitridation of HfO2 high-k gate dielectric stack on 4H-SiC
2007
Dr Sanatan Chattopadhyay
Professor Alex Yakovlev
Impact of strain on the design of low-power high-speed circuits
2007
Dr Sanatan Chattopadhyay
Professor Alex Yakovlev
Impact of strain on the design of low-power high-speed circuits
2007
Dr Rajat Mahapatra
Nipapan Poolamai
Dr Alton Horsfall
Dr Sanatan Chattopadhyay
Professor Nick Wright
et al.
Leakage current and charge trapping behavior in Ti O2 Si O2 high- κ gate dielectric stack on 4H-SiC substrate
2007
Dr Yuk Tsang
Dr Sanatan Chattopadhyay
Dr Suresh Uppal
Dr Enrique Escobedo-Cousin
Deepak Ramakrishnan
et al.
Modeling of the threshold voltage in strained Si/Si1-x Gex/S1-yGey(x ≥ y) CMOS architectures
2007
Dr Yuk Tsang
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Goutan Dalapati
Rouzet Agaiby
et al.
Analytical model for threshold voltage of p-MOSFET in strained-Si/SiGe dual channel architecture
2006
Dr Sanatan Chattopadhyay
John Varzgar
Dr Johan Seger
Dr Yuk Tsang
Dr Kelvin Kwa
et al.
Capacitance-voltage (C-V) technique for the characterisation of stained Si/Si1-xGex hetero-structure MOS devices
2006
Dr Sanatan Chattopadhyay
John Varzgar
Dr Johan Seger
Dr Yuk Tsang
Dr Kelvin Kwa
et al.
Capacitance-voltage (C-V) technique for the characterisation of strained Si/Si1-xGex hetero-structure MOS devices
2006
Dr Rajat Mahapatra
Nipapan Poolamai
Dr Sanatan Chattopadhyay
Professor Nick Wright
Characterization of thermally oxidized Ti/SiO
2
gate dielectric stacks on 4H-SiC substrate
2006
Dr Sarah Olsen
Dr Enrique Escobedo-Cousin
John Varzgar
Rimoon Agaiby
Dr Johan Seger
et al.
Control of self-heating in thin virtual substrate strained Si MOSFETs
2006
Arup Saha
Dr Sanatan Chattopadhyay
Determination of the interface properties of Ni-silicided strained-Si/SiGe heterostructure Schottky diodes using capacitance-voltage technique
2006
Arup Saha
Dr Sanatan Chattopadhyay
Effect of silicidation on the electrical characteristics of polycrystalline-SiGe Schottky diode
2006
Goutan Dalapati
Dr Sanatan Chattopadhyay
Luke Driscoll
Professor Anthony O'Neill
Dr Kelvin Kwa
et al.
Extraction and modelling of strained-Si MOSFET parameters using small signal channel conductance method
2006
Goutan Dalapati
Dr Sanatan Chattopadhyay
Luke Driscoll
Professor Anthony O'Neill
Dr Kelvin Kwa
et al.
Extraction of strained-Si metal-oxide-semiconductor field-effect transistor parameters using small signal channel conductance method
2006
John Varzgar
Dr Mehdi Kanoun
Dr Suresh Uppal
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
et al.
Gate Oxide Reliability of Strained Si NMOS Devices Employing a Thin SiFe Strain Relaxed Buffer
2006
John Varzgar
Dr Sanatan Chattopadhyay
Dr Suresh Uppal
Dr Sarah Olsen
Professor Anthony O'Neill
et al.
Gate oxide reliability of strained Si NMOS devices employing a thin SiGe strain-relaxed buffer
2006
Dr Suresh Uppal
John Varzgar
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
Professor Anthony O'Neill
et al.
Gate oxide reliability of strained Si/SiGe MOS: effect of Ge content variation
2006
Dr Suresh Uppal
John Varzgar
Dr Mehdi Kanoun
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
et al.
Gate Oxide Reliability on strained Si/SiGe MOS: Effect of Ge content variation
2006
Dr Suresh Uppal
Dr Mehdi Kanoun
Dr Sanatan Chattopadhyay
Rimoon Agaiby
Dr Sarah Olsen
et al.
Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices
2006
Dr Suresh Uppal
Dr Mehdi Kanoun
Dr Sanatan Chattopadhyay
Rouzet Agaiby
Dr Sarah Olsen
et al.
Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices
2006
Dr Ming-Hung Weng
Dr Rajat Mahapatra
Peter Tappin
Bing Miao
Dr Sanatan Chattopadhyay
et al.
High temperature characterization of high-κ dielectrics on SiC
2006
Dr Suresh Uppal
Dr Mehdi Kanoun
John Varzgar
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
et al.
Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices
2006
Dr Suresh Uppal
Dr Mehdi Kanoun
John Varzgar
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
et al.
Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices
2006
Goutan Dalapati
Dr Kelvin Kwa
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
et al.
Impact of strained Si thickness and Ge our diffusion on strained-Si/SiO2 interface quality for surface channel strained Si n-MOSFET devices
2006
Goutan Dalapati
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Dr Sarah Olsen
Dr Yuk Tsang
et al.
Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs
2006
Arup Saha
Dr Alton Horsfall
Dr Sanatan Chattopadhyay
Professor Nick Wright
Professor Anthony O'Neill
et al.
Quantum-mechanical modeling of current-voltage characteristics of Ti-silicided Schottky diodes
2006
Goutan Dalapati
Dr Sanatan Chattopadhyay
Dr Yuriy Butenko
Professor Lidija Siller
Rapid thermal oxidation of Ge-rich Si
1-
x
Ge
x
heterolayers
2006
John Varzgar
Dr Mehdi Kanoun
Dr Suresh Uppal
Dr Sanatan Chattopadhyay
Dr Yuk Tsang
et al.
Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures
2006
John Varzgar
Dr Mehdi Kanoun
Dr Suresh Uppal
Dr Sanatan Chattopadhyay
Dr Yuk Tsang
et al.
Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures
2006
Professor Anthony O'Neill
Dr Sarah Olsen
Dr Enrique Escobedo-Cousin
John Varzgar
Rimoon Agaiby
et al.
Strained Si MOSFETs using thin virtual substrates
2006
Professor Anthony O'Neill
Dr Sarah Olsen
Dr Enrique Escobedo-Cousin
John Varzgar
Rimoon Agaiby
et al.
Strained Si technology
2006
Professor Anthony O'Neill
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Strained Si/SiGe MOS technology
2006
Professor Anthony O'Neill
Dr Sarah Olsen
Dr Enrique Escobedo-Cousin
John Varzgar
Rouzet Agaiby
et al.
Strained silicon technology
2006
Dr Sanatan Chattopadhyay
Surface roughness and interface engineering for gate dielectrics on strained layers
2006
Goutan Dalapati
Dr Kelvin Kwa
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
et al.
Thermal oxidation of strained-Si: impact of strained-Si thickness and Ge on Si/SiO2 interface
2006
Arup Saha
Dr Sanatan Chattopadhyay
Goutan Dalapati
An investigation of electrical and structural properties of Ni-germanosilicided Schottky diode
2005
Arup Saha
Dr Alton Horsfall
Dr Sanatan Chattopadhyay
Barrier In-homogeneities and Carrier Transport in Silicided Schottky Diodes
2005
Arup Saha
Dr Sanatan Chattopadhyay
Characterization of Metal-Semiconductor Heterointerface using Capacitance-Voltage Technique
2005
Dr Sanatan Chattopadhyay
Professor Alex Yakovlev
Emeritus Professor Satnam Dlay
Professor Anthony O'Neill
Design ofsrained silicon inverters for fture VLSI applications
2005
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Luke Driscoll
et al.
Doubling speed using strained Si/SiGe CMOS technology
2005
Arup Saha
Dr Sanatan Chattopadhyay
Goutan Dalapati
Effect of annealing on interface state density of Ni-silicided/Si
1-x
Ge
x
Schottky diode
2005
Arup Saha
Dr Sanatan Chattopadhyay
Electrical Characterization of Ni-SiGe and Ni(Pt)-SiGe Schottky Diodes
2005
Dr Kelvin Kwa
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Sanatan Chattopadhyay
Goutan Dalapati
et al.
Fowler-Nordheim tunnelling in strained Si/SiGe MOS devices: impact of cross-hatching and nanoscale roughness
2005
Dr Sarah Olsen
Luke Driscoll
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
et al.
High performance strained Si.SiGe n-channel MOSFETs: impact of alloy composition and layer architecture
2005
Rudra Dhar
Goutan Dalapati
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Dr Sarah Olsen
et al.
Modelling of self-heating in strained Si n-channel MOSFETs on SiGe virtual substrates
2005
Dr Sanatan Chattopadhyay
Arup Saha
Poly-SiGe Schottky
2005
Arup Saha
Dr Alton Horsfall
Dr Sanatan Chattopadhyay
Professor Nick Wright
Professor Anthony O'Neill
et al.
Prediction of barrier inhomogeneities and carrier transport in Ni-silicided Schottky diode
2005
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
Dr Kelvin Kwa
Dr Jie Zhang
et al.
Strained Si/SiGe CMOS: high performance without re-tooling
2005
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Piotr Dobrosz
Professor Steve Bull
Luke Driscoll
et al.
Study of strain relaxation in Si/SiGe metal-oxide-semiconductor field-effect transistors
2005
Arup Saha
Dr Sanatan Chattopadhyay
Technology CAD of silicided Schottky barrier MOSFET for elevated source-drain engineering
2005
Arup Saha
Dr Sanatan Chattopadhyay
Technology CAD of Silicided Schottky Barrier MOSFETs for Elevated Source Drain Engineering
2005
Arup Saha
Dr Sanatan Chattopadhyay
Contact metallization on strained-Si
2004
Dr Sarah Olsen
Dr Kelvin Kwa
Luke Driscoll
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
et al.
Design, fabrication and characterisation of strained Si/SiGe MOS transistors
2004
Arup Saha
Dr Sanatan Chattopadhyay
Effect of annealing on interface state density of Ni-silicided Si1-xGex Schottky diodes
2004
Arup Saha
Dr Sanatan Chattopadhyay
Effect of Annealing on Interface State Density of Ni-silicided Si1-xGex Schottky Diodes
2004
Arup Saha
Dr Sanatan Chattopadhyay
Goutan Dalapati
Electrical characterization of Niy(Si1-xGe x)1-y/Si1-xGex and NiSi/Si Schottky diodes
2004
Arup Saha
Dr Sanatan Chattopadhyay
Electrical characterization of TiSi/Si
1-x-y
Ge
x
C
y
Schottky diodes
2004
Arup Saha
Dr Sanatan Chattopadhyay
Electrical Characterization of TiSi/Si1-x-yGexCy Schottky Diodes
2004
Dr Sanatan Chattopadhyay
Electrical Characterization of TiSi/Si1-x-yGexCy Schottky Diodes
2004
Dr Sanatan Chattopadhyay
Goutan Dalapati
Arup Saha
Electrical Properties of NiSi/strained-Si Schottky diodes
2004
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Luke Driscoll
et al.
Evaluation of strained Si/SiGe material for high performance CMOS
2004
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Luke Driscoll
et al.
Evaluation of strained Si/SiGe material for high performance CMOS
2004
Lynn Driscoll
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
Dr Kelvin Kwa
et al.
Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters
2004
Luke Driscoll
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
Dr Kelvin Kwa
et al.
Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters
2004
Luke Driscoll
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
Dr Kelvin Kwa
et al.
Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters
2004
Luke Driscoll
Dr Sarah Olsen
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
Dr Kelvin Kwa
et al.
Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters
2004
Dr Sanatan Chattopadhyay
On the stability and composition of Ni-silicided Si1-xGex films
2004
Dr Sarah Olsen
Professor Anthony O'Neill
Luke Driscoll
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
et al.
Optimization of alloy composition for high-performance strained-Si-SiGe N-channel MOSFETs
2004
Dr Sanatan Chattopadhyay
Stability and composition of Ni-germanosilicided Si/sub 1-x/Ge/sub x/ films
2004
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Dr Sarah Olsen
Professor Anthony O'Neill
Strained Si MOSFETs on relaxed SiGe platforms: Performance and challenges
2004
Dr Sarah Olsen
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
Luke Driscoll
Professor Anthony O'Neill
et al.
Strained Si/SiGe n-channel MISFETs
2004
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Sanatan Chattopadhyay
Luke Driscoll
Dr Kelvin Kwa
et al.
Study of single- and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs
2004
Dr Sarah Olsen
Professor Anthony O'Neill
Professor Steve Bull
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
et al.
Thermal oxidation of strained Si/SiGe: impact of surface morphology and effect on MOS devices
2004
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
Dr Nebojsa Jankovic Professor
Dr Sarah Olsen
Luke Driscoll
et al.
A model for capacitance reconstruction from measured lossy MOS capacitance-voltage characteristics
2003
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Dr Sarah Olsen
Luke Driscoll
Professor Anthony O'Neill
et al.
Capacitance - Voltage Characterization of Strained Si/SiGe Multiple Heterojunction Capacitors as a Tool for Heterojunction Metal Oxide Semiconductor Field Effect Transistor Channel Design
2003
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Dr Sarah Olsen
Luke Driscoll
Professor Anthony O'Neill
et al.
C-V characterization of strained Si/SiGe multiple heterojunction capacitors as a tool for heterojunction MOSFET channel design
2003
Dr Sarah Olsen
Luke Driscoll
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
et al.
High performance strained Si.SiGe NMOSFETs using a novel CMOS architecture
2003
Dr Sarah Olsen
Luke Driscoll
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
et al.
High performance strained Si/SiGe n-channel MOSFETs: impact of alloy composition and layer architecture
2003
Dr Sarah Olsen
Luke Driscoll
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
Professor Anthony O'Neill
et al.
High performance strained Si/SiGe nMOSFETs using a novel CMOS architecture
2003
Dr Sarah Olsen
Professor Anthony O'Neill
Luke Driscoll
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
et al.
High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture
2003
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Luke Driscoll
et al.
Impact of virtual substrate Ge composition on strained Si MOSFET performance
2003
Professor Anthony O'Neill
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Luke Driscoll
Professor Steve Bull
et al.
Impact of Virtual Substrate Ge Composition on Strained Si MOSFET Performance
2003
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Luke Driscoll
et al.
Impact of virtual substrate growth on high performance strained Si/SiGe double quantum well metal-oxide-semiconductor field-effect transistors
2003
Dr Sarah Olsen
Professor Anthony O'Neill
Dr Sanatan Chattopadhyay
Luke Driscoll
Dr Kelvin Kwa
et al.
N-MOSFET performance in single and dual channel strained Si/SiGe CMOS architectures
2003
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
Luke Driscoll
Professor Anthony O'Neill
et al.
Optimisation of channel thickness in strained Si/SiGe MOSFETs
2003
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
Luke Driscoll
Professor Anthony O'Neill
et al.
Optimisation of Channel Thickness in Strained Si/SiGe MOSFETs
2003
Dr Kelvin Kwa
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
Luke Driscoll
Professor Anthony O'Neill
et al.
Optimisation of channel thickness in strained Si/SiGe MOSFETs
2003
Dr Sanatan Chattopadhyay
Interfacial reactions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing
2002
Dr Sanatan Chattopadhyay
Thermal reaction of nickel and Si/sub 0.75/Ge/sub 0.25/ alloy
2002
Dr Sanatan Chattopadhyay
Thermal reaction of nickel and Si0.75 Ge0.25 alloy
2002