Newcastle University
Toggle Main Menu
Toggle Search
Home
Browse
Latest
Policies
About
Home
Browse
Latest
Policies
About
ePrints
Browse by author
Browsing publications by
Kazuhiro Adachi.
Newcastle Authors
Title
Year
Full text
Kazuhiro Adachi
Dr Christopher Johnson
Elucidation of the intrinsic loss arising from switch output capacitance coss in ultra-high-speed low-loss power converters
2006
Kazuhiro Adachi
Dr Christopher Johnson
Super-junction device forward characteristics and switched power limitations
2002
Kazuhiro Adachi
Dr Christopher Johnson
TCAD optimisation of 4H-SiC channel-doped MOSFET with p-polysilicon gate
2002
Kazuhiro Adachi
Dr Christopher Johnson
TCAD optimisation of 4H-SiC channel-doped MOSFET with p-polysilicon gate
2002
Kazuhiro Adachi
Dr Christopher Johnson
Comparison of super-junction structures in 4H-SiC and Si for high voltage applications
2001
Kazuhiro Adachi
High channel mobility in normally-off 4H-SiC buried channel MOSFETs
2001
Professor Nick Wright
Dr Christopher Johnson
Professor Anthony O'Neill
Dr Alton Horsfall
Dr Sylvie Ortolland
et al.
Physical characterization of residual implant damage in 4H-SiC double implanted bipolar technology
2001
Kazuhiro Adachi
Dr Christopher Johnson
Comparison of super-junction structures in 4H-SiC and Si for high voltage applications
2000
Professor Nick Wright
Dr Christopher Johnson
Professor Anthony O'Neill
Dr Alton Horsfall
Kazuhiro Adachi
et al.
Implanted bipolar technology in 4H-SiC
2000
Professor Nick Wright
Dr Christopher Johnson
Professor Anthony O'Neill
Dr Alton Horsfall
Dr Sylvie Ortolland
et al.
Implanted bipolar technology in 4H-SiC
2000
Professor Nick Wright
Dr Christopher Johnson
Professor Anthony O'Neill
Dr Alton Horsfall
Dr Sylvie Ortolland
et al.
Implanted bipolar technology in 4H-SiC
2000
Dr Christopher Johnson
Professor Anthony O'Neill
Dr Alton Horsfall
Dr Sylvie Ortolland
Kazuhiro Adachi
et al.
Physical characterization of residual implant damage in 4H-SiC double implanted bipolar technology
2000
Professor Nick Wright
Dr Christopher Johnson
Professor Anthony O'Neill
Dr Alton Horsfall
Dr Sylvie Ortolland
et al.
Physical characterization of residual implant damage in 4H-SiC double implanted bipolar technology
2000
Kazuhiro Adachi
Dr Christopher Johnson
Dr Sylvie Ortolland
Professor Anthony O'Neill
TCAD evaluation of double implanted 4H-SiC power bipolar transistors
2000
Kazuhiro Adachi
Dr Christopher Johnson
Dr Sylvie Ortolland
Professor Nick Wright
Professor Anthony O'Neill
et al.
TCAD evaluation of double implanted 4H-SiC power bipolar transistors
1999