Toggle Main Menu Toggle Search

Open Access padlockePrints

High channel mobility in normally-off 4H-SiC buried channel MOSFETs

Lookup NU author(s): Kazuhiro Adachi

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Abstract

We have fabricated buried channel (BC) MOSFETs with a thermally grown gate oxide in 4H-SiC. The gate oxide was prepared by dry oxidation with wet reoxidation. The BC region was formed by nitrogen ion implantation at room temperature followed by annealing at 1500 ° C. The optimum doping depth of the BC region has been investigated. For the nitrogen concentration of 1 × 1017 cm-3 , the optimum depth was found to be 0.2μm. Under this condition, the channel mobility of 140 cm2/Vs was achieved with the threshold voltage of 0.3 V. This channel mobility is the highest reported so far for a normally-off 4H-SiC MOSFET with a thermally grown gate oxide.


Publication metadata

Author(s): Harada S, Suzuki S, Senzaki J, Kosugi R, Adachi K, Fukuda K, Arai K

Publication type: Article

Publication status: Published

Journal: IEEE Electron Device Letters

Year: 2001

Volume: 22

Issue: 6

Pages: 272-274

ISSN (print): 0741-3106

ISSN (electronic): 1558-0563

Publisher: IEEE

URL: http://dx.doi.org/10.1109/55.924839

DOI: 10.1109/55.924839


Altmetrics

Altmetrics provided by Altmetric


Share