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Defect profiling with low energy positrons of nitrogen implanted silicon

Lookup NU author(s): Professor Steve BullORCiD

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Abstract

The vacancy profile in Czochralski silicon (111) implanted with 50 keV nitrogen ions has been determined using positron annihilation spectroscopy. The nitrogen distribution has been measured using secondary ion mass spectroscopy. The fitted defect distribution compares well with the results of TRIM calculations.

Publication metadata

Author(s): Van Der Werf DP, Saleh AS, Towner A, Nathwani M, Taylor J, Rice-Evans PC, Bull SJ

Publication type: Article

Publication status: Published

Journal: Materials Science Forum

Year: 1997

Volume: 255-257

Pages: 500-502

Print publication date: 01/01/1997

ISSN (print): 0255-5476

ISSN (electronic): 1422-6375

Publisher: Trans Tech Publications

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