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Browsing publications by
Dr Mehdi Kanoun.
Newcastle Authors
Title
Year
Full text
Liang Yan
Dr Sarah Olsen
Dr Mehdi Kanoun
Rimoon Agaiby
Goutan Dalapati
et al.
Analysis of gate leakage characteristics in strained Si MOSFETs
2006
Dr Sarah Olsen
Dr Mehdi Kanoun
Mohamed Al-Areeki
Rimoon Agaiby
Goutan Dalapati
et al.
Analysis of gate leakage in strained Si MOSFETs
2006
Liang Yan
Dr Sarah Olsen
Dr Mehdi Kanoun
Rimoon Agaiby
Goutan Dalapati
et al.
Analysis of Gate Leakage in Strained Si MOSFETs
2006
Liang Yan
Dr Sarah Olsen
Dr Mehdi Kanoun
Professor Anthony O'Neill
Gate leakage mechanisms in strained Si devices
2006
John Varzgar
Dr Mehdi Kanoun
Dr Suresh Uppal
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
et al.
Gate Oxide Reliability of Strained Si NMOS Devices Employing a Thin SiFe Strain Relaxed Buffer
2006
Dr Suresh Uppal
John Varzgar
Dr Mehdi Kanoun
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
et al.
Gate Oxide Reliability on strained Si/SiGe MOS: Effect of Ge content variation
2006
Dr Suresh Uppal
Dr Mehdi Kanoun
Dr Sanatan Chattopadhyay
Rouzet Agaiby
Dr Sarah Olsen
et al.
Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices
2006
Dr Suresh Uppal
Dr Mehdi Kanoun
Dr Sanatan Chattopadhyay
Rimoon Agaiby
Dr Sarah Olsen
et al.
Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices
2006
Dr Suresh Uppal
Dr Mehdi Kanoun
John Varzgar
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
et al.
Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices
2006
Dr Suresh Uppal
Dr Mehdi Kanoun
John Varzgar
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
et al.
Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices
2006
John Varzgar
Dr Mehdi Kanoun
Dr Suresh Uppal
Dr Sanatan Chattopadhyay
Dr Yuk Tsang
et al.
Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures
2006
John Varzgar
Dr Mehdi Kanoun
Dr Suresh Uppal
Dr Sanatan Chattopadhyay
Dr Yuk Tsang
et al.
Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures
2006