Publications by Dr Sylvie Ortolland - ePrints

Browsing publications by Dr Sylvie Ortolland.

Newcastle Authors	Title	Year
Dr Gordon Phelps Professor Nick Wright Dr Graeme Chester Dr Christopher Johnson Professor Anthony O'Neill et al.	Enhanced dopant diffusion effects in 4H silicon carbide	2002
Dr Gordon Phelps Professor Nick Wright Dr Christopher Johnson Professor Anthony O'Neill Dr Sylvie Ortolland et al.	Enhanced nitrogen diffusion in 4H-SiC	2002
Dr Gordon Phelps Professor Nick Wright Dr Graeme Chester Dr Christopher Johnson Professor Anthony O'Neill et al.	Enhanced nitrogen diffusion in 4H-SiC	2002
Dr Alton Horsfall Dr Sylvie Ortolland Professor Nick Wright Dr Christopher Johnson	Double implanted power MESFET technology in 4H-SiC	2001
Dr Sylvie Ortolland Professor Nick Wright Dr Christopher Johnson	Effect of residual damage on carrier transport properties in a 4H-SiC double implanted bipolar junction transistor	2001
Professor Nick Wright Dr Christopher Johnson Professor Anthony O'Neill Dr Alton Horsfall Dr Sylvie Ortolland et al.	Physical characterization of residual implant damage in 4H-SiC double implanted bipolar technology	2001
Dr Christopher Johnson Professor Nick Wright Dominique Morrison Dr Alton Horsfall Dr Sylvie Ortolland et al.	Recent progress and current issues in SiC semiconductor devices for power applications	2001
Dr Alton Horsfall Dr Sylvie Ortolland Dr Christopher Johnson	Double implanted power MESFET technology in 4H-SiC	2000
Professor Nick Wright Dr Christopher Johnson Professor Anthony O'Neill Dr Alton Horsfall Dr Sylvie Ortolland et al.	Implanted bipolar technology in 4H-SiC	2000
Professor Nick Wright Dr Christopher Johnson Professor Anthony O'Neill Dr Alton Horsfall Dr Sylvie Ortolland et al.	Implanted bipolar technology in 4H-SiC	2000
Dominique Morrison Professor Nick Wright Dr Sylvie Ortolland Dr Christopher Johnson Professor Anthony O'Neill et al.	Low temperature annealing of 4H-SiC Schottky diode edge terminations 4 formed by 30 keV Ar+ implantation	2000
Professor Nick Wright Dr Christopher Johnson Professor Anthony O'Neill Dr Alton Horsfall Dr Sylvie Ortolland et al.	Physical characterization of residual implant damage in 4H-SiC double implanted bipolar technology	2000
Dr Christopher Johnson Professor Anthony O'Neill Dr Alton Horsfall Dr Sylvie Ortolland Kazuhiro Adachi et al.	Physical characterization of residual implant damage in 4H-SiC double implanted bipolar technology	2000
Kazuhiro Adachi Dr Christopher Johnson Dr Sylvie Ortolland Professor Anthony O'Neill	TCAD evaluation of double implanted 4H-SiC power bipolar transistors	2000
Dr Sylvie Ortolland Dr Christopher Johnson	4H-SIC SIT device for RF heating applications	1999
Dr Sylvie Ortolland Dr Christopher Johnson Professor Nick Wright Dominique Morrison Professor Anthony O'Neill et al.	Optimisation of a power 4H-SiC SIT device for RF heating applications	1999
Dr Sylvie Ortolland Dr Christopher Johnson Dominique Morrison Professor Anthony O'Neill	Optimisation of a power 4H-SiC SIT device for RF heating applications	1999
Kazuhiro Adachi Dr Christopher Johnson Dr Sylvie Ortolland Professor Nick Wright Professor Anthony O'Neill et al.	TCAD evaluation of double implanted 4H-SiC power bipolar transistors	1999
Dominique Morrison Dr Christopher Johnson Professor Anthony O'Neill Dr Sylvie Ortolland	The effect of annealing on argon implanted edge terminations for 4H-SiC Schottky diodes	1999