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Diffusion and activation of dopants in silicon and advanced silicon-based materials

Lookup NU author(s): Professor Nick Cowern, Dr Suresh Uppal

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Abstract

A quantitative description of the transient diffusion and activation of boron during post-implantation annealing steps is one of the most challenging tasks in the simulation of silicon doping processes. In industrially relevant situations, simulations needs to address diffusion at extrinsic concentrations, the agglomeration of self-interstitials, and the formation of boron-interstitial clusters. This paper describes the experimental work performed or used to calibrate model parameters as independently as possible. The combined model is then applied to ultra-shallow junction formation by annealing boron implanted into crystalline or preamorphized silicon. In comparison to bulk silicon, much less is known about diffusion of dopants in SiGe and germanium which are considered as technological options for future technology nodes. Therefore, dedicated experiments were performed to clarify open points in the diffusion behaviour of dopants in these materials. © 2006 The Royal Swedish Academy of Sciences.

Publication metadata

Author(s): Pichler P, Ortiz CJ, Colombeau B, Cowern NEB, Lampin E, Uppal S, Karunaratne MSA, Bonar JM, Willoughby AFW, Claverie A, Cristiano F, Lerch W, Paul S

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 21sth Nordic Semiconductor Meeting

Year of Conference: 2006

Pages: 89-96

ISSN: 0281-1847

Publisher: Physica Scripta T, Kungliga Vetenskapsakademien

URL: http://dx.doi.org/10.1088/0031-8949/2006/T126/021

DOI: 10.1088/0031-8949/2006/T126/021

Library holdings: Search Newcastle University Library for this item

ISBN: 00318949

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