ePrints

Structure and electrical activity of rare-earth dopants in selected III-Vs

Lookup NU author(s): Dr Jose Coutinho, Dr Michael Shaw, Professor Patrick Briddon

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Abstract

Density functional theory is used to investigate Eu, Er and Tm rare earth (RE) impurities in GaAs, GaN and AlN. The most stable site is when the RE is located at a group III substitutional site but in GaN and GaAs these defects do not then possess any gap levels, unlike AIN. RE-VN defects in GaN are shown to possess levels which could act as traps for excitons. The interaction of oxygen with substitutional REs is also considered.

Publication metadata

Author(s): Filhol J-S, Petit S, Jones R, Hourahine B, Frauenheim Th, Overhof H, Coutinho J, Shaw MJ, Briddon PR, Oberg S

Editor(s): Ng H.M., Wraback M., Hiramatsu K., Grandjean N.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Materials Research Society Symposium - Proceedings

Year of Conference: 2003

Pages: 471-476

ISSN: 0272-9172

Publisher: Materials Research Society

Share