Browse by author
Lookup NU author(s): Dr Michael Shaw
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
A microscopic theory to provide quantitative predictions of scattering cross sections and carrier lifetimes in imperfect strained layer superlattices is developed. Strain-dependent empirical pseudopotentials are formulated to obtain the electronic wave functions with the results of scattering theory employed to extract the dynamical information. The theory is applied to a number of imperfect GaxIn1-xSb/InAs superlattices, containing isovalent substitutional anion defects, both isolated and in interface islands. Key factors governing the lifetime are identified, including defect atom type, location and lattice relaxation, and the detailed size and shape of the interface islands. Multiple scattering processes are shown to become significant for larger interface islands. Typical elastic scattering lifetimes for isolated antimony defects of 1.6 μs are predicted, dropping to 0.4 ns for islands containing approximately 50 defect ions. ©2000 The American Physical Society.
Author(s): Shaw MJ
Publication type: Article
Publication status: Published
Journal: Physical Review B - Condensed Matter and Materials Physics
Year: 2000
Volume: 61
Issue: 8
Pages: 5431-5441
Print publication date: 01/01/2000
ISSN (print): 1098-0121
ISSN (electronic): 1550-235X
Publisher: American Physical Society
URL: http://dx.doi.org/10.1103/PhysRevB.61.5431
DOI: 10.1103/PhysRevB.61.5431
Altmetrics provided by Altmetric
