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Diffusion and activation of ultrashallow B implants in silicon-on-insulator: end-of-range defect dissolution and the buried Si/SiO2 interface

Lookup NU author(s): Professor Nick Cowern

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Author(s): Hamilton JJ, Cowern NEB, Sharp JA, Kirkby KJ, Collart EJH, Colombeau B, Bersani M, Giubertoni D, Parisini A

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2006

Volume: 89

Issue: 4

ISSN (print): 0003-6951

ISSN (electronic): 1077-3118

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.2240257

DOI: 10.1063/1.2240257

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