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Lookup NU author(s): Milos Indjin
This work is licensed under a Creative Commons Attribution 4.0 International License (CC BY 4.0).
In this work, we have modelled and computed the transport properties of the double-barrier InGaAs/GaAsSb structure from the resonant tunnelling point of view. Based on the classical Tsu-Esaki formula for the tunnelling current, we have calculated the current density-voltage characteristic of a Al-free type-II In0.53Ga0.47As/GaAs0.51Sb0.49 structure at different cryogenic and elevated temperatures. The tunnelling coefficient has been calculated in the framework of effective mass approximation with nonparabolicity included, using the transfer matrix approach. A good qualitative agreement of the position of resonant current peaks with the existing experimental data was achieved. Our calculation shows a very high sensitivity of the tunnelling current peak on monolayer-scale layer structure fluctuation which strongly affects peak to valley ratio in the resonant tunnelling structure.
Author(s): Indjin M, Griffiths J
Publication type: Article
Publication status: Published
Journal: Optical and Quantum Electronics
Year: 2020
Volume: 52
Online publication date: 11/05/2020
Acceptance date: 13/04/2020
Date deposited: 07/12/2020
ISSN (print): 0306-8919
ISSN (electronic): 1573-817X
Publisher: Springer
URL: https://doi.org/10.1007/s11082-020-02359-9
DOI: 10.1007/s11082-020-02359-9
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