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Upconverted electroluminescence via Auger scattering of interlayer excitons in van der Waals heterostructures

Lookup NU author(s): Dr Aleksey KozikovORCiD

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This work is licensed under a Creative Commons Attribution 4.0 International License (CC BY 4.0).

Abstract

The intriguing physics of carrier-carrier interactions, which likewise affect the operation of light emitting devices, stimulate the research on semiconductor structures at high densities of excited carriers, a limit reachable at large pumping rates or in systems with long-lived electron-hole pairs. By electrically injecting carriers into WSe₂/MoS₂ type-II heterostructures which are indirect in real and k-space, we establish a large population of typical optically silent interlayer excitons. Here, we reveal their emission spectra and show that the emission energy is tunable by an applied electric field. When the population is further increased by suppressing the radiative recombination rate with the introduction of an hBN spacer between WSe₂ and MoS₂, Auger-type and exciton-exciton annihilation processes become important. These processes are traced by the observation of an up-converted emission demonstrating that excitons gaining energy in non-radiative Auger processes can be recovered and recombine radiatively.

Publication metadata

Author(s): Binder J, Howarth J, Withers F, Molas MR, Taniguchi T, Watanabe K, Faugeras C, Wysmolek A, Danovich M, Fal'ko V, Geim A, Novoselov K, Potemski M, Kozikov A

Publication type: Article

Publication status: Published

Journal: Nature Communications

Year: 2019

Volume: 10

Online publication date: 27/05/2019

Acceptance date: 29/04/2019

Date deposited: 01/06/2020

ISSN (electronic): 2041-1723

Publisher: Nature Publishing Group

URL: https://doi.org/10.1038/s41467-019-10323-9

DOI: 10.1038/s41467-019-10323-9

PubMed id: 31133651

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