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Ultraviolet electroluminescence from randomly assembled n-SnO₂ nanowires p-GaN:Mg Heterojunction

Lookup NU author(s): Dr Stevin PramanaORCiD

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Abstract

Electroluminescence characteristics of a heterojunction light-emitting diode, which was fabricated by depositing a layer of randomly assembled n-SnO2 nanowires on p-GaN:Mg/sapphire substrate via vapor transport method, were investigated at room temperature. Peak wavelength emission at around 388 nm was observed for the diode under forward bias. This is mainly related to the radiative recombination of weakly bounded excitons at the shallow-trapped states of SnO2 nanowires, Under reverse bias, near bandedge emission from the p-GaN:Mg/sapphire leads to the observation of emission peak at around 370 nm. © 2010 American Chemical Society.

Publication metadata

Author(s): Yang HY, Yu SF, Liang HK, Lau SP, Pramana SS, Ferraris C, Cheng CW, Fan HJ

Publication type: Article

Publication status: Published

Journal: ACS Applied Materials and Interfaces

Year: 2010

Volume: 2

Issue: 4

Pages: 1191-1194

Print publication date: 28/04/2010

Online publication date: 15/03/2010

ISSN (print): 1944-8244

ISSN (electronic): 1944-8252

Publisher: American Chemical Society

URL: https://doi.org/10.1021/am1000294

DOI: 10.1021/am1000294

PubMed id: 20423138

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