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Lookup NU author(s): Professor Nick Cowern
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Author(s): Cowern NEB, Colombeau B, Benson J, Smith AJ, Lerch W, Paul S, Graf T, Cristiano F, Hebras X, Bolze D
Publication type: Article
Publication status: Published
Journal: Applied Physics Letters
Year: 2005
Volume: 86
Issue: 10
ISSN (print): 0003-6951
ISSN (electronic): 1077-3118
Publisher: American Institute of Physics
URL: http://dx.doi.org/10.1063/1.1870131
DOI: 10.1063/1.1870131
Notes: This paper resolved a lengthy controversy over the mechanisms by which fluorine stabilises boron implantation doping in silicon. As a result industry has clear guidelines on how to optimize the technology - see for example S. Severi et al. in IEEE Electron Device Letters, 28, 198 (2007) and model it in TCAD tools - e.g. V. Moroz et al., Appl. Phys. Lett. 87, 051908 (2005). The paper has stimulated collaboration with 2 other university groups - Bath and Catania, Italy. This has led to two further joint APL publications and membership of the FP7 consortium proposal 'Euringen'. 10 citations (all positive) in the first year of publication.
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