Improvement of High-Frequency FinFET Performance by Fin Width Engineering

Makovejev, S; Olsen, SH; Arshad, MKM; Flandre, D; Raskin, JP; Kilchytska, V

doi:10.1109/SOI.2012.6404381

Improvement of High-Frequency FinFET Performance by Fin Width Engineering

Lookup NU author(s): Sergej Makovejev, Dr Sarah Olsen, Professor Jean-Pierre Raskin

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Abstract

Frequency dependent behaviour of MOSFETs arises from self-heating and source-to-drain coupling through the substrate. In this work the output conductance variation with frequency is experimentally investigated in FinFETs with various fin widths. We demonstrate that fin narrowing suppresses the output conductance degradation due to the substrate effect in the high-frequency range such that self-heating dominates the output conductance variation. The work thus emphasizes the importance of thermal management and device design in FinFETs.