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Optimising the Growth of Few-Layer Graphene on Silicone Carbide by Nickel Silicidation

Lookup NU author(s): Dr Enrique Escobedo-Cousin, Dr Toby Hopf, Professor Anthony O'Neill, Dr Alton Horsfall, Professor Jon Goss, Professor Peter Cumpson

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Abstract

Few-layers graphene films (FLG) were grown by local solid phase epitaxy on a semi-insulating 6H-SiC substrate by annealing Ni films deposited on the Si and C-terminated faces of the SiC. The impact of the annealing process on the final quality of the FLG films is studied using Raman spectroscopy. X-ray photoelectron spectroscopy was used to verify the presence of graphene on the sample surface. We also demonstrate that further device fabrication steps such as dielectric deposition can be carried out without compromising the FLG films integrity.

Publication metadata

Author(s): Escobedo-Cousin E, Vassilevski K, Hopf T, Wright N, O'Neill A, Horsfall A, Goss J, Cumpson P

Publication type: Article

Publication status: Published

Journal: Materials Science Forum

Year: 2013

Volume: 740-742

Pages: 121-124

Print publication date: 01/01/2013

Date deposited: 01/10/2014

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.121

DOI: 10.4028/www.scientific.net/MSF.740-742.121

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