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Lookup NU author(s): Mouhsine Fjer, Dr Stefan Persson, Dr Enrique Escobedo-Cousin, Professor Anthony O'Neill
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The low frequency noise performance of strained Si heterojunction bipolar transistors (sSi HBTs) is presented for the first time. Conventional SiGe HBTs and Si bipolar junction transistors (BJTs), processed with strained Si devices, were also measured as a reference. It is found that a lower noise level is obtained in sSi HBTs for a given collector current, which is important for circuit applications, compared with either SiGe HBTs or Si BJTs. However, sSi HBTs exhibit greater low frequency noise compared with other devices at fixed base current. This is due to the presence of defects that are caused by the integration of the strain-relaxed buffer in the fabrication of sSi HBTs. The relationship between low frequency noise and defects is supported by material characterization.
Author(s): Fjer M; Persson S; O'Neill AG; Escobedo-Cousin E
Publication type: Article
Publication status: Published
Journal: IEEE Transactions on Electron Devices
Year: 2011
Volume: 58
Issue: 12
Pages: 4196-4203
Print publication date: 10/10/2011
ISSN (print): 0018-9383
ISSN (electronic): 1557-9646
Publisher: IEEE
URL: http://dx.doi.org/10.1109/TED.2011.2167753
DOI: 10.1109/TED.2011.2167753
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