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High temperature measurements of metal contacts on epitaxial graphene

Lookup NU author(s): Dr Venkata Nagareddy, Irina Nikitina, Professor Jon Goss, Professor Nick Wright, Dr Alton Horsfall

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Abstract

Electrical characteristics of Cr/Au and Ti/Au metal contacts on epitaxial graphene on 4H-SiC showed significant variations in resistance parameters at 300 K. These parameters decreased substantially as the temperature increased to 673 K. The work function, binding energy, and diffusion energy of the deposited metals were used to explain these observed variations. The quantitative analysis of our data demonstrates that non-reactive metals with higher work functions result in lower contact resistance, which can be further decreased by 70% using appropriate annealing. These results provide important information when considering epitaxial graphene for high temperature applications. (C) 2011 American Institute of Physics. [doi:10.1063/1.3627167]

Publication metadata

Author(s): Nagareddy VK, Nikitina IP, Gaskill DK, Tedesco JL, Myers-Ward RL, Eddy CR, Goss JP, Wright NG, Horsfall AB

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2011

Volume: 99

Issue: 7

Print publication date: 19/08/2011

ISSN (print): 0003-6951

ISSN (electronic): 1077-3118

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.3627167

DOI: 10.1063/1.3627167

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