ePrints

Ultrafast stimulated emission due to quasidirect transitions in silicon nanocrystals

Lookup NU author(s): Professor Lidija Siller, Dr Ben Horrocks

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Abstract

We report on a detailed study of ultrafast stimulated emission arising from efficient quasidirect transitions in silicon nanocrystals under femtosecond pumping. In nanometer-sized silicon nanocrystals, the quasidirect transitions are rapidly cut off (on subpicosecond time scale) owing to surface trapping of carriers. Consequently, also the core-related radiative recombination undergoes ultrafast decay. We propose, theoretically describe, and experimentally demonstrate an extension of the commonly used variable stripe length (VSL) method, which enables us to measure transient stimulated emission even on the subpicosecond time scale. The extension consist in introducing a step-like or gradual pump pulse delay along the stripe length. By applying the extended VSL method in combination with the shifting excitation spot technique, we reveal the presence of room-temperature transient optical gain in silicon nanocrystals (lifetime <1 ps) at wavelengths similar to 590 nm with peak values of the order of 100 cm(-1). Finally, on the basis of our results we discuss possible ways of obtaining a laser source based on silicon nanocrystals.

Publication metadata

Author(s): Zidek K, Pelant I, Trojanek F, Maly P, Gilliot P, Honerlage B, Oberle J, Siller L, Little R, Horrocks BR

Publication type: Article

Publication status: Published

Journal: Physical Review B

Year: 2011

Volume: 84

Issue: 8

Print publication date: 29/08/2011

ISSN (print): 1098-0121

ISSN (electronic): 1550-235X

Publisher: American Physical Society

URL: http://dx.doi.org/10.1103/PhysRevB.84.085321

DOI: 10.1103/PhysRevB.84.085321

Altmetrics

Funding

Share