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Lookup NU author(s): Dr Sunilkumar Rana, Ivano Gregoratto, Pedro Ortiz Bahamon, Dr Alun Harris, Emeritus Professor James Burdess, Emeritus Professor Calum McNeilORCiD
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An accurate alignment of surface-to-bulk features (within +/- 2 mu m) during a double-sided silicon wafer processing can be extremely difficult. This is due to a combination of mask misalignment errors and unreliability of bulk etching techniques in translating the bulk feature shapes down to the surface side. In this paper, we present a fabrication process for an electrostatically actuated cantilever device where an accurate surface-to-bulk feature alignment is imperative to the operation of the device. The fabrication process compensates for the bulk etch-induced feature size variation and mask misalignment errors using a combination of self-aligning features and C4F8 plasma polymer passivation. [2009-0226]
Author(s): Rana S, Gregoratto I, Ortiz PM, Harris AJ, Burdess JS, McNeil CJ
Publication type: Article
Publication status: Published
Journal: Journal of Microelectromechanical Systems
Year: 2010
Volume: 19
Issue: 4
Pages: 871-877
Print publication date: 01/08/2010
ISSN (print): 1057-7157
ISSN (electronic): 1941-0158
Publisher: IEEE
URL: http://dx.doi.org?10.1109/JMEMS.2010.2050678
DOI: 10.1109/JMEMS.2010.2050678
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