Browse by author
Lookup NU author(s): Professor Nick Cowern
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
This paper discusses the role of amorphisation and residual end-of-range defects in p-channel source/drain engineering. A comparison between preamorphisation and molecular implant approaches shows up some important common features of electrical activation, diffusion, and junction leakage, related to the formation and location of boron-interstitial and self-interstitial clusters. The success of these techniques depends on confining 'end-of-range' defects -whether TEM-visible defects or sub-microscopic clusters - within the narrow region between the boron implant peak and the source-drain/halo depletion region. This observation points to significant improvements that can still be made in implantation processing for ultrashallow junctions. © 2008 Materials Research Society.
Author(s): Cowern NE
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Materials Research Society Symposium Proceedings: MRS Spring Meeting
Year of Conference: 2008
Pages: 143-154
ISSN: 0272-9172
Publisher: Materials Research Society
Library holdings: Search Newcastle University Library for this item
ISBN: 9781605110400