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Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics

Lookup NU author(s): Layi Alatise, Dr Sarah Olsen, Professor Anthony O'Neill

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Publication metadata

Author(s): Alatise OM, Olsen SH, O'Neill AG

Publication type: Article

Publication status: Published

Journal: Solid State Electronics

Year: 2010

Volume: 54

Issue: 6

Pages: 628-634

Print publication date: 25/01/2010

ISSN (print): 0038-1101

ISSN (electronic): 1879-2405

Publisher: Pergamon

URL: http://dx.doi.org/10.1016/j.sse.2009.12.036

DOI: 10.1016/j.sse.2009.12.036

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