Browse by author
Lookup NU author(s): Professor Nick Cowern
Suppression or stimulation of B diffusion and activation in Si (coimplanted with F) has been investigated by anneals in a N-2 ambient enriched with H-2 or O-2. The H-2 rich ambient leads to B desorption and therefore stimulated diffusion toward the surface, thus effectively reducing indiffusion. Annealing in an O-2 rich ambient promotes deeper B diffusion by injection of Si interstitials. The impact of these ambients can further be modulated by combining the B implant with a shallow or deep F coimplant acting as Si interstitial trap. Deep F coimplant and H-2 rich ambient offer attractive B diffusion and activation.
Author(s): Pawlak BJ, Cowern NEB, Vandervorst W
Publication type: Article
Publication status: Published
Journal: Applied Physics Letters
Year: 2009
Volume: 94
Issue: 2
Date deposited: 24/05/2010
ISSN (print): 0003-6951
ISSN (electronic): 1077-3118
Publisher: American Institute of Physics
URL: http://dx.doi.org/10.1063/1.3068756
DOI: 10.1063/1.3068756
Altmetrics provided by Altmetric